| PART |
Description |
Maker |
| AD600AR-REEL AD600AR-REEL7 AD600JR-REEL AD600JR-RE |
Gain range:0 to 40dB ; -7.5V; 600mW; daual, low noise, wideband variable gain amplifier. For ultrasound and sonar time-gain control, high performance audio and RF AGC systems and signal measurement
|
Analog Devices
|
| AT-108_1 AT-108 AT-108TR |
Voltage Variable Absorptive Attenuator, 40dB 0.5 - 3.0 GHz
|
MACOM[Tyco Electronics]
|
| LTC5505-1 LTC5505-2 LTC5505 |
RF Power Detector with Buffered Output and >40dB Dynamic Range
From old datasheet system
|
Linear
|
| MAX2057ETXD MAX2057ETXTD |
1700MHz to 2500MHz Variable-Gain Amplifier with Analog Gain Control
|
Maxim Integrated Products
|
| MAX2056 MAX2056ETX-T MAX2056ETX |
From old datasheet system
800MHz to 1000MHz Variable-Gain Amplifier with Analog Gain Control
|
MAXIM[Maxim Integrated Products]
|
| C10508-01-15 |
Variable gain, stable detection even at high gain
|
Hamamatsu Corporation
|
| MS62581 |
Gain and Attenuation Volume Controller IC 4 Sets of Stereo Input, Low voltage Gain and Attenuation 15~-79dB
|
MOSA ELECTRONICS
|
| AD600SQ/883B AD600JR-REEL7 AD602AR-REEL AD602AR-RE |
VOLTAGE CONTROLLED GAIN AMPLIFIER|CMOS|DIP|16PIN|CERAMIC
VOLTAGE CONTROLLED GAIN AMPLIFIER|DUAL|CMOS|SOP|16PIN|PLASTIC
VOLTAGE CONTROLLED GAIN AMPLIFIERDUALCMOSSOIC16，PLASTIC SPECIALTY ANALOG CIRCUIT, PDSO16
VOLTAGE CONTROLLED GAIN AMPLIFIER, DUAL, CMOS, SOP, 16PIN, PLASTIC SPECIALTY ANALOG CIRCUIT, PDSO16
VOLTAGE CONTROLLED GAIN AMPLIFIERDUAL，CMOSSOP16PINPLASTIC SPECIALTY ANALOG CIRCUIT, PDSO16
VOLTAGE CONTROLLED GAIN AMPLIFIER锛?DUAL锛?CMOS锛?SOIC16锛?LASTIC
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| PE15A1010 |
40 dB Gain, 0.9 dB NF, 14 dBm, 2 GHz to 6 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
